Ion beams are available within JANNuS-SCALP facility in a wide range of energy, 50 eV – 11 MeV, using either 50 kV SIDONIE isotope separator, 190 kV IRMA ion implanter or 2 MV ARAMIS ion accelerator, and the various dedicated end-beam stations. Ions can be deposited (fabrication of targets or standards) or incorporated (ion implantation) into a solid, or can be used to irradiate a material.
All beams are scanned uniformly over a chosen surface. Temperature (of the target) is ranging from -170°C to 1000°C. A large variety of elements are available, of almost all stable elements, from H to Bi.
Available elements at JANNuS-SCALP facility
Available energies at JANNuS-SCALP facility