The analysis of materials by RBS-C is available in situ thanks to the connection between the IRMA implanter and the ARAMIS accelerator: it is thus possible to follow the evolution of the damage measured by RBS-C (using a helium beam produced by ARAMIS) induced by ion implantation (ion beam from IRMA) in a single crystal, at a given temperature (up to 600°C).

For any request : jannus-scalp@ijclab.in2p3.fr